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1/11 june 2004 stp45nf06 stb45nf06 n-channel 60v - 0.022 ? - 38a to-220/d 2 pak stripfet?ii mosfet table 1: general features typical r ds (on) = 0.022 ? exceptional dv/dt capability standard threshold drive 100% avalanche tested description this mosfet is the latest development of stmi- croelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications high-efficiency dc-dc converters solenoid and relay drivers dc-dc & dc-ac converters table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d stp45nf06 stb45nf06 60 v 60 v < 0.028 ? < 0.028 ? 38 a 38 a 1 2 3 d 2 pak to-220 1 3 sales type marking package packaging stp45nf06 p45nf06 to-220 tube STB45NF06T4 b45nf06 d 2 pak tape & reel rev. 2
stp45nf06 - stb45nf06 2/11 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 38a, di/dt 300a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: off table 7: on symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k ? ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 38 a i d drain current (continuous) at t c = 100 c 26 a i dm ( ) drain current (pulsed) 152 a p tot total dissipation at t c = 25 c 80 w derating factor 0.53 w/ c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature ? 65 to 175 c t j max. operating junction temperature 175 c rthj-case thermal resistance junction-case max 1.87 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 38 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 135 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10 v, i d = 19 a 0.022 0.028 ?
3/11 stp45nf06 - stb45nf06 electrical characteristics (continued) table 8: dynamic table 9: switching on table 10: switching off table 11: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =19 a 24 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f= 1 mhz, v gs = 0 1730 215 63 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30v, i d = 19a r g =4.7 ? v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 100 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48v, i d = 38a, v gs = 10v 43 9 15 58 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 30v, i d = 19a, r g =4.7 ?, v gs = 10v (see test circuit, figure 3) 50 20 ns ns t d(off) t f t c off-voltage rise time fall time cross-over time vclamp =48v, i d =38a r g =4.7 ?, v gs = 10v (see test circuit, figure 5) 45 42 60 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 38 a i sdm (1) source-drain current (pulsed) 152 a v sd (2) forward on voltage i sd = 38a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 38a, di/dt = 100a/s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 95 260 5.5 ns nc a
stp45nf06 - stb45nf06 4/11 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/11 stp45nf06 - stb45nf06 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
stp45nf06 - stb45nf06 6/11 figure 15: unclamped inductive load test cir- cuit figure 16: switching times test circuit for resistive load figure 17: test circuit for inductive load switching and diode recovery times figure 18: unclamped inductive wafeform figure 19: gate charge test circuit
7/11 stp45nf06 - stb45nf06 table 12: revision history date revision description of changes 14-june-2004 2 new stylesheet. no content change
stp45nf06 - stb45nf06 8/11 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/11 stp45nf06 - stb45nf06 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
stp45nf06 - stb45nf06 10/11 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/11 stp45nf06 - stb45nf06 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states.

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